Simulation study of radiation damage in double-sided silicon microstrip detectors for the CBM Silicon Tracking System

We started TCAD simulations last year to understand the radiation damage in Double Sided Silicon Strip Detectors (DSSD) for the CBM Silicon Tracking System. We used the public domain versions from Stanford namely SUPREM for Process Simulation and PISCES for device simulation [1]. The results were reported in the GSI Scientific Report 2008 [2]. Now we are using the three-dimensional TCAD simulation package from Synopsys [3] which we procured through the Europractise Software Service. Synopsys has several subpackages for threedimensional simulations like Sentaurus Process, Sentaurus Device, Workbench, TecPlot, Inspect etc.